JPH0240638B2 - - Google Patents

Info

Publication number
JPH0240638B2
JPH0240638B2 JP57036704A JP3670482A JPH0240638B2 JP H0240638 B2 JPH0240638 B2 JP H0240638B2 JP 57036704 A JP57036704 A JP 57036704A JP 3670482 A JP3670482 A JP 3670482A JP H0240638 B2 JPH0240638 B2 JP H0240638B2
Authority
JP
Japan
Prior art keywords
crucible
dendritic
susceptor body
susceptor
web
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57036704A
Other languages
English (en)
Japanese (ja)
Other versions
JPS589896A (ja
Inventor
Suchuaato Dankan Chaaruzu
Ei Piotorofusukii Hooru
Erizabesu Sukatsuchi Maria
Hooru Makuhyuu Jeimuzu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of JPS589896A publication Critical patent/JPS589896A/ja
Publication of JPH0240638B2 publication Critical patent/JPH0240638B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Fibers (AREA)
JP57036704A 1981-07-10 1982-03-10 樹枝状ウエブ成長用の溶融装置 Granted JPS589896A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/282,334 US4389377A (en) 1981-07-10 1981-07-10 Apparatus for growing a dendritic web
US282334 1994-07-29

Publications (2)

Publication Number Publication Date
JPS589896A JPS589896A (ja) 1983-01-20
JPH0240638B2 true JPH0240638B2 (en]) 1990-09-12

Family

ID=23081034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57036704A Granted JPS589896A (ja) 1981-07-10 1982-03-10 樹枝状ウエブ成長用の溶融装置

Country Status (7)

Country Link
US (1) US4389377A (en])
EP (1) EP0069821B1 (en])
JP (1) JPS589896A (en])
AU (1) AU554202B2 (en])
DE (1) DE3272809D1 (en])
ES (1) ES510300A0 (en])
IN (1) IN161381B (en])

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5942538A (ja) * 1982-09-03 1984-03-09 Kiyoshi Oguchi 電離放射線感応ネガ型レジスト
IN161924B (en]) * 1984-10-29 1988-02-27 Westinghouse Electric Corp
US4698120A (en) * 1984-10-29 1987-10-06 Westinghouse Electric Corp. Barrier for quartz crucible for drawing silicon dendritic web and method of use
US4751059A (en) * 1986-12-05 1988-06-14 Westinghouse Electric Corp. Apparatus for growing dendritic web crystals of constant width
US4828808A (en) * 1987-09-02 1989-05-09 The United States Of America As Represented By The United States Department Of Energy Apparatus for silicon web growth of higher output and improved growth stability
DE3736339A1 (de) * 1987-10-27 1989-05-11 Siemens Ag Anordnung zum kontinuierlichen aufschmelzen von siliziumgranulat fuer das bandziehverfahren
DE3840445C2 (de) * 1987-12-03 1996-08-14 Toshiba Ceramics Co Vorrichtung und Verfahren zum Ziehen eines Einkristalls
JPH0633218B2 (ja) * 1987-12-08 1994-05-02 日本鋼管株式会社 シリコン単結晶の製造装置
US4919901A (en) * 1987-12-31 1990-04-24 Westinghouse Electric Corp. Barrier design for crucibles for silicon dendritic web growth
EP0340941A1 (en) * 1988-04-28 1989-11-08 Nkk Corporation Method and apparatus for manufacturing silicon single crystals
AU632886B2 (en) * 1990-01-25 1993-01-14 Ebara Corporation Melt replenishment system for dendritic web growth
US5913980A (en) * 1996-04-10 1999-06-22 Ebara Solar, Inc. Method for removing complex oxide film growth on silicon crystal

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL237834A (en]) * 1958-04-09
GB939102A (en) * 1959-02-18 1963-10-09 Philco Corp Improvements in and relating to the production of crystals, and apparatus for use therein
US3096158A (en) * 1959-09-25 1963-07-02 Gerthart K Gaule Apparatus for pulling single crystals in the form of long flat strips from a melt
FR1320741A (fr) * 1961-10-06 1963-03-15 Gen Electric Méthode de grossissement des cristaux
US3977934A (en) * 1975-01-02 1976-08-31 Motorola, Inc. Silicon manufacture
SU661966A1 (ru) * 1976-11-23 1980-04-05 Всесоюзный Научно-Исследовательский Институт Монокристаллов И Особо Чистых Химических Веществ "Вниимонокристалл" Устройство дл выт гивани монокристаллов из расплава
US4271129A (en) * 1979-03-06 1981-06-02 Rca Corporation Heat radiation deflectors within an EFG crucible
JPS5611675A (en) * 1979-07-04 1981-02-05 Marantz Japan Inc Key-touch strength changing circuit for automatic playing piano

Also Published As

Publication number Publication date
JPS589896A (ja) 1983-01-20
IN161381B (en]) 1987-11-21
AU8060182A (en) 1983-01-13
EP0069821B1 (en) 1986-08-27
AU554202B2 (en) 1986-08-14
US4389377A (en) 1983-06-21
DE3272809D1 (en) 1986-10-02
ES8306802A1 (es) 1983-06-01
EP0069821A1 (en) 1983-01-19
ES510300A0 (es) 1983-06-01

Similar Documents

Publication Publication Date Title
JPH0240638B2 (en])
CN1020481C (zh) 单晶硅的制造设备
KR930003044B1 (ko) 실리콘 단결정의 제조방법 및 장치
US5069742A (en) Method and apparatus for crystal ribbon growth
JPS6124791B2 (en])
CN1019031B (zh) 制取硅单晶的设备
US4873063A (en) Apparatus for zone regrowth of crystal ribbons
EP0844318B1 (en) Method of and apparatus for continuously producing a solid material
US5055157A (en) Method of crystal ribbon growth
US5143704A (en) Apparatus for manufacturing silicon single crystals
US5229083A (en) Method and apparatus for crystal ribbon growth
JP2561072B2 (ja) 単結晶の育成方法及びその装置
GB2166062A (en) Apparatus for drawing dendritic silicon web from silicon melt
JP4555677B2 (ja) 連続的な結晶化により、所定の横断面及び柱状の多結晶構造を有する結晶ロッドを製造するための装置
US3694165A (en) Crucible apparatus for a semiconductor crystal puller
JP3628355B2 (ja) 高周波誘導加熱コイル装置
US4698120A (en) Barrier for quartz crucible for drawing silicon dendritic web and method of use
JPH0259494A (ja) シリコン単結晶の製造方法及び装置
US8256373B2 (en) Device for depositing a layer of polycrystalline silicon on a support
JP2589212B2 (ja) 半導体単結晶製造装置
US4919901A (en) Barrier design for crucibles for silicon dendritic web growth
US6143633A (en) In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon
JPS63176388A (ja) 単結晶引上げ装置
JPH0412085A (ja) シリコン単結晶の製造装置
JPH02172885A (ja) シリコン単結晶の製造方法